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Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) - Addendum to JEDEC JESD 24

contributor authorJEDEC - Solid State Technology Association
date accessioned2017-09-04T18:26:32Z
date available2017-09-04T18:26:32Z
date copyright11/01/1990 (R 2002)
date issued2002
identifier otherILTZJBAAAAAAAAAA.pdf
identifier urihttps://lib.yabesh.ir/std/handle/yse/208746
description abstractThe purpose of this test method is to measure the thermal impedance of the Bipolar Transistor under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the base-emitter voltage is used as the junction temperature indicator. This test method is used to measure the thermal response of the junction to a heating pulse. Specifically, the test may be used to measure dc thermal resistance, and to ensure proper die mountdown to its case. This is accomplished through the appropriate choice of pulse duration and heating power magnitude.
languageEnglish
titleJEDEC JESD24-4num
titleThermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) - Addendum to JEDEC JESD 24en
typestandard
page18
statusActive
treeJEDEC - Solid State Technology Association:;2002
contenttypefulltext
subject keywordsBipolar Transistors
subject keywordsDelta Base-Emitter Voltage Method
subject keywordsThermal Impedance Measurements - Bipolar Transistors


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